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Pomiar rozkładu fosforu w warstwach epitaksjalnych GaAs1-xPx w oparciu o efekt fotowoltaiczny = Phosphorus contents profile measurement in GaAs1-xPx epitaxial layers, based on photovoltaic phenomenon

Object's details: Pomiar rozkładu fosforu w warstwach epitaksjalnych GaAs1-xPx w oparciu o efekt fotowoltaiczny = Phosphorus contents profile measurement in GaAs1-xPx epitaxial layers, based on photovoltaic phenomenon

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Provider:Repozytorium Cyfrowe Instytutów Naukowych

Description

Title:
Pomiar rozkładu fosforu w warstwach epitaksjalnych GaAs1-xPx w oparciu o efekt fotowoltaiczny = Phosphorus contents profile measurement in GaAs1-xPx epitaxial layers, based on photovoltaic phenomenon
Creator:
Roszkiewicz Krzysztof
Contributor:
Brzozowski Andrzej
Description:
Bibliogr. s. 21
Object availability:
free access
Rights:
Rights Reserved - Free Access;
Copyright-protected material. May be used within the limits of statutory user freedoms;
Open
Date:
1981.12.31;
1981
Type:
Text;
Article
Language:
Polish
Source:
ITME, sygn. dostępny;
http://katalog.pan.pl/webpac-bin/218bitmeEN/wgbroker.exe?new+-access+top+search+open+NR+kv_5525
Format:
application/pdf
Publisher:
Wydaw. Przemysłu Maszynowego "WEMA"
Relation:
Electronic Materials
Subject:
Electronic - journal - materials;
Electronic - materials;
phosphorus concentration;
GaAsP;
photovoltaic phenomenon
Data provider:
Repozytorium Cyfrowe Instytutów Naukowych

Can I use it?:
seek permission
Type:
other

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