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Identyfikacja centrów defektowych w warstwach epitaksjalnych 4H-SiC = Identification of defect centers in 4H-SiC epitaxial layers

Object's details: Identyfikacja centrów defektowych w warstwach epitaksjalnych 4H-SiC = Identification of defect centers in 4H-SiC epitaxial layers

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Provider:Repozytorium Cyfrowe Instytutów Naukowych

Description

Title:
Identyfikacja centrów defektowych w warstwach epitaksjalnych 4H-SiC = Identification of defect centers in 4H-SiC epitaxial layers
Creator:
Kozubal Michał
Description:
Book/Chapter
Object availability:
free access
Rights:
Rights Reserved - Free Access;
Copyright-protected material. May be used within the limits of statutory user freedoms;
Open
Date:
2013.12.31;
2013
Type:
Text;
Article
Language:
Polish
Source:
ITME, sygn. dostępny;
http://katalog.pan.pl/webpac-bin/218bitmeEN/wgbroker.exe?new+-access+top+search+open+NR+kv_6404
Format:
application/pdf
Publisher:
ITME
Relation:
Electronic Materials
Subject:
point defects;
deep traps;
DLTS;
SiC;
electron irradiation
Data provider:
Repozytorium Cyfrowe Instytutów Naukowych

Can I use it?:
seek permission
Type:
other

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Republic of Poland

Digital Libraries Federation

European Union - European Regional Development Fund

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