Object's details: Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers
Provider:Dolnośląska Biblioteka Cyfrowa
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- Source: http://aleph.bg.pwr.wroc.pl/F/?func=find-b&request=000122307+&find_code=SYS&adjacent=N&local_base=TUR&x=64&y=13&filter_code_1=WLN&filter_request_1=&filter_code_2=WYR&filter_request_2=&filter_code_3=WYR&filter_request_3=&filter_code_4=WFT&filter_request_4=&filter_code_5=WSB&filter_request_5= ;http://opticaapplicata.pwr.edu.pl
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