Federacja Bibliotek Cyfrowych

Homepage
Dolnośląska Biblioteka Cyfrowa
Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers

Object's details: Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers

tile.noImage

Provider:Dolnośląska Biblioteka Cyfrowa

Description

Title:
Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers
Creator:
Wośko, Mateusz
Contributor:
Urbańczyk, Wacław. Redakcja
Description:
Optica Applicata, Vol. 49, 2019, nr 1, s. 167-176
Object availability:
free access
Rights:
Wszystkie prawa zastrzeżone (Copyright);
Dla wszystkich w zakresie dozwolonego użytku
Date:
2019.12.31;
2019
Type:
artykuł
Language:
eng;
angielski;
English
Source:
<sygn. PWr A3481II>;
http://aleph.bg.pwr.wroc.pl/F/?func=find-b&request=000122307+&find_code=SYS&adjacent=N&local_base=TUR&x=64&y=13&filter_code_1=WLN&filter_request_1=&filter_code_2=WYR&filter_request_2=&filter_code_3=WYR&filter_request_3=&filter_code_4=WFT&filter_request_4=&filter_code_5=WSB&filter_request_5= ;http://opticaapplicata.pwr.edu.pl
Publisher:
Oficyna Wydawnicza Politechniki Wrocławskiej
Relation:
Optica Applicata;
Optica Applicata, Vol. 49, 2019;
Optica Applicata, Vol. 49, 2019, nr 1;
Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki
Subject:
optyka;
GaN;
nucleation;
recrystallization;
metalorganic chemical vapor deposition (MOCVD);
nitrides;
LED;
MSM;
MESFET devices
Identifier: DOI: 10.5277/oa190115
Data provider:
Dolnośląska Biblioteka Cyfrowa

Can I use it?:
seek permission
Type:
image

Similar objects

tile.noImage

Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers

Creator:Wośko, Mateusz

Date:2019.12.31 | 2019

Type:image

tile.noImage

Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures

Creator:Macherzyński, Wojciech | Indykiewicz, Kornelia | Paszkiewicz, Bogdan

Date:2013.12.31 | 2013

Type:image

tile.noImage

Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature

Creator:Veleschuk, Vitaly | Vlasenko, Alexander | Kisselyuk, Maxim | Vlasenko, Zoya | Khmil, Denis | Borshch, Vladimir

Date:2015.12.31 | 2015

Type:image

tile.noImage

Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures

Creator:Wośko, Mateusz | Paszkiewicz, Bogdan | Paszkiewicz, Regina | Tłaczała, Marek

Date:2013.12.31 | 2013

Type:image

tile.noImage

Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures

Creator:Gryglewicz, Jacek | Stafiniak, Andrzej | Wośko, Mateusz | Prażmowska, Joanna | Paszkiewicz, Bogdan

Date:2013.12.31 | 2013

Type:image

tile.noImage

Rentgenowska metoda określania profilu składu chemicznego w heterostrukturach GaN/InGaN otrzymywanych metodą MOCVD na podłożu szafirowym = HRXRD investigation of the chemical composition profile in the GaN/InGaN heterostructures grown by the MOCVD method on a saphire substrate

Creator:Wójcik Marek

Date:2012.12.31 | 2012

Type:other

tile.noImage

Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD epitaxy

Creator:Korona Krzysztof

Date:1997.12.31 | 1997

Type:other

tile.noImage

Investigation of deep defects using generation-recombination noise

Creator:Gislason, Haflidi P. | Seghier, Djelloul

Date:2006.12.31 | 2006

Type:image

FBC TeNe Project

Project co-financed by European Funds under the Operational Program Digital Poland for 2014-2020 (project no. POPC.02.04.00-00-0012 / 20-00)

More information about the project can be found at: https://tene.fbc.pionier.net.pl

European Funds. Digital Poland

Republic of Poland

Digital Libraries Federation

European Union - European Regional Development Fund

We use files, through the cookie quality improvement layer of our website.For more information, please read the document Privacy Policy